BYV32E

Ultra fast Rectifier INCHANGE Semiconductor BYV32E FEATURES ·High surge capacity ·Low forward voltage ·Fast switching ·Soft recovery characteristic ·Reverse surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 150 V IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) 20 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase) 50Hz 60Hz 125 137 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Semiconductor Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-b Thermal Resistance,Junction to Mounting Base Rth j-a Thermal Resistance,Junction to Ambient Product Specification BYV32E MAX 2.4 60 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 8A ;Tj=150℃ IF= 20A ;Tj=25℃ 0.85 1.15 IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=100℃ 30 600 trr Maximum Reverse Recovery Time IF =2A;di/dt = 50A/µs;VR=30V 60 UNIT V μA ns NOTICE： ISC reserves ...