Dual ultrafast power diode
BYV430W-300P
Dual ultrafast power diode
26 September 2018
Product data sheet
1. General description
2x30A, 300V dual u...
Description
BYV430W-300P
Dual ultrafast power diode
26 September 2018
Product data sheet
1. General description
2x30A, 300V dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
Low forward voltage drop Fast Switching Soft recovery characteristics High thermal cycling performance Low thermal resistance
3. Applications
Telecom power supplies Welding machines Secondary rectification in SMPS
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VR IF(AV)
reverse voltage
average forward current
IFSM
non-repetitive peak
forward current
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Conditions DC δ = 0.5 ; Tmb ≤ 103 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode
IF = 30 A; Tj = 25 °C; Fig. 6 IF = 30 A; Tj = 150 °C; Fig. 6
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
300 V
-
-
30
A
-
-
300 A
-
-
330 A
-
1
1.25 V
-
0.85 1
V
-
-
50
ns
WeEn Semiconductors
BYV430W-300P
Dual ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A1
anode 1
2
K
cathode
3
A2
anode 2
mb
K
mounting base; cathode
Simplified outline
Graphic symbol
A1
A2
K
sym125
123
TO-247 (SOT429)
6. Ordering information
Table 3. Ordering info...
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