BYW29E-200

Ultra fast Rectifier FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications INCHANGE Semiconductor BYW29E-200 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=128℃ VALUE UNI T 200 V 8 A IFRM Repetitive Peak Forward Current@Tc=128℃ 16 A Nonrepetitive Peak Surge Current IFSM 10 ms single half sine-wave superimposed on 80 A rated load conditions;One shot(50Hz) Tj Junction Temperature -40~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier INCHANGE Semiconductor BYW29E-200 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.7 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF= 8A;Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 8A;Tc= 150℃ IF= 20A;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM;Tc= 25℃ Tc=150℃ trr Maximum Reverse Recovery Time IF =1A;dIF/dt=-100A/μs;VR=...