C3D04060A

Ultrafast Rectifier INCHANGE Semiconductor C3D04060A FEATURES ·Ultrafast with soft recovery ·Operating temperature ·Reverse voltage ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) PD Maximum power dissipation VALUE UNIT 600 V 4 A 100 A 75 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor C3D04060A MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF* Maximum Instantaneous Forward Voltage IF=3A ;Tj=25℃ IF= 4A ;Tj=25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=150℃ VR= VRWM 1.25 1.28 250 10 trr Maximum Reverse Recovery Time IF =1A;di/dt = 200A/µs 50 *:Pulse test ,Pulse width=300us,duty cycle≤2% UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the ...