D5L60

Ultra fast Rectifier INCHANGE Semiconductor D5L60 FEATURES ·With TO-220F packaging ·Low switching loss ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General rectification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage tw=500ns;duty=1/40 600 V IF(AV) Average Rectified Forward Current @Tc=75℃ 5 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 100 A rated load conditions;One shot TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor D5L60 MAX 3.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF=5A 1.5 IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=125℃ 10 80 trr Maximum Reverse Recovery Time IF =0.5A;IR=1A 50 UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the a...