DPG30C400HB

Ultra fast Rectifier INCHANGE Semiconductor DPG30C400HB FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Common cathode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=140℃ Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 50Hz) 400 V 15 A 190 A PD Total Power Dissipation 90 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor DPG30C400HB MAX 1.67 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF=15A ;Tj=25℃ VF Maximum Instantaneous Forward Voltage IF=15A ;Tj=150℃ IF=30A ;Tj=25℃ IF=30A ;Tj=150℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=25℃ 1.38 1.13 1.61 V 1.39 1 180 μA trr Maximum Reverse Recovery Time IF =15A;VR=270V;diF/dt=200A/μs 45 ns NOTICE： ISC reserves the rights to make ...