EPU6006

Ultrafast Recovery Diode INCHANGE Semiconductor EPU6006 FEATURES ·Ultrafast recovery time ·Low forward voltage drop ·High efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are intended for use in the output rectification stage of SMPS, welding, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Nonrepetitive Peak Surge Current t=8.3ms,sine wave TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 600 V 60 A 600 A -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Recovery Diode THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor EPU6006 MAX 0.65 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 60A ;Tj=25℃ IF= 60A ;Tj=150℃ 1.5 1.3 IR Maximum Instantaneous Reverse Current VR= 600V;Tj=25℃ VR= 600V;Tj=150℃ 30 200 trr Maximum Reverse Recovery Time IF =0.5A;IR=1A;Irr＝0.25A 60 UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is present...