FEP30FP

Ultrafast Rectifier FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center-tap ·Low forward voltage;high current capability ·Low thermal resistance ·Low power loss ·Superfast recovery times for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current TJ Max.Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor FEP30FP VALUE 300 210 300 30 UNIT V A 300 A 150 ℃ -55~150 ℃ MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Rectifier INCHANGE Semiconductor FEP30FP ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 15A 1.3 IR Maximum Instantaneous Reverse Current VR=VR Rated; Tj=25℃ VR=VR Rated; Tj=150℃ 10 500 trr Maximum Reverse Recovery Time;per leg IF =0.5A;IR=1A;Irr=0.25A 50 UNIT V μA ns DIMENSIONAL DRAWING NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time w...