FEP30JP

Ultra fast Rectifier INCHANGE Semiconductor FEP30JP FEATURES ·With TO-247 packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=110℃ VALUE UNI T 600 V 30 A IFSM RMS Forward Current 60 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 300 A rated load conditions) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier INCHANGE Semiconductor FEP30JP THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 15A IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tj= 25℃ VR= rated VRRM; Tj= 100℃ 1.5 V 10 500 μA trr Maximum Reverse Recovery Time IF =15A;IR=1.0A;Irr=0.25A 50 ns NOTICE： ISC reserves the rights to make changes of the content herein th...