IDP08E65D1

Ultra fast Rectifier INCHANGE Semiconductor IDP08E65D1 FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR IF(AV) IFRM IFSM PD Tj Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 650 V Average Rectified Forward Current @Tc=25℃ Tc=100℃ 16 8 A Repetitive Peak Surge Current (Square Wave) 24 A Nonrepetitive Peak Surge Current 8.3 ms single half sine-wave superimposed on 64 A rated load conditions;One shot Maximum Power Dissipation 56 W Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier INCHANGE Semiconductor IDP08E65D1 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.69 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 8A 1.7 V IR Maximum Instantaneous Reverse Current VR= rated VRRM;Tc= 25℃ Tc=175℃ 40 2000 μA trr Maximum Reverse Recovery Time ...