IDP20E65D2

Ultrafast Recovery Diode INCHANGE Semiconductor IDP20E65D2 FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 650 V IF(AV) IFSM TJ Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 120 A wave, single phase, tp=8.3ms) Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Ultrafast Recovery Diode INCHANGE Semiconductor IDP20E65D2 ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 20A 2.2 V IR Maximum Instantaneous Reverse Current VRRM=600V 40 μA trr Maximum Reverse Recovery Time IF= 1A;di/dt=200A/us;VR=30V 32 ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gu...