MUR1060CT

Ultrafast Rectifier INCHANGE Semiconductor MUR1060CT FEATURES ·High current capability ·Low forward voltage drop ·Low power loss,high efficiency ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Dual center tap rectifier suited for switched mode power supplies and high frequency DC to DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current IFSM Nonrepetitive Peak Surge Current TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 600 V 10 A 100 A -55~150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MUR1060CT MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF=5A ;Tj=25℃ 1.5 IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=125℃ VR= VRWM 250 10 trr Maximum Reverse Recovery Time IF =0.5A;IR =1.0A;Irr =0.25A 50 UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our p...