Ultrafast Rectifier
Ultrafast Rectifier
INCHANGE Semiconductor
MUR1560G
FEATURES ·Ultrafast 35 and 60 nanosecond recovery time ·Popular TO...
Description
Ultrafast Rectifier
INCHANGE Semiconductor
MUR1560G
FEATURES ·Ultrafast 35 and 60 nanosecond recovery time ·Popular TO-220 package ·Low forward drop ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The MUR1560 is designed for use in switching power
Supplies,inverters and as free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=145℃
600
V
15
A
IFRM
Peak Rectified forward current @Tc=145℃
30
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Ultrafast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
MUR1560G
MAX 1.5
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF*
Maximum Instantaneous Forward Voltage
IF=15A ;Tj=25℃ IF= 15A ;Tj=150℃
IR*
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=150℃
VR= VRWM
1.5 1.2
1000 10
trr
Maximum Reverse Recovery Time
IF =1A;di/dt = 50A/µs
60
*:Pulse test ,Pulse width=300us,duty cycle≤...
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