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MUR1560G

INCHANGE

Ultrafast Rectifier

Ultrafast Rectifier INCHANGE Semiconductor MUR1560G FEATURES ·Ultrafast 35 and 60 nanosecond recovery time ·Popular TO...


INCHANGE

MUR1560G

File Download Download MUR1560G Datasheet


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Ultrafast Rectifier INCHANGE Semiconductor MUR1560G FEATURES ·Ultrafast 35 and 60 nanosecond recovery time ·Popular TO-220 package ·Low forward drop ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MUR1560 is designed for use in switching power Supplies,inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=145℃ 600 V 15 A IFRM Peak Rectified forward current @Tc=145℃ 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MUR1560G MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF* Maximum Instantaneous Forward Voltage IF=15A ;Tj=25℃ IF= 15A ;Tj=150℃ IR* Maximum Instantaneous Reverse Current VR= VRWM;Tj=150℃ VR= VRWM 1.5 1.2 1000 10 trr Maximum Reverse Recovery Time IF =1A;di/dt = 50A/µs 60 *:Pulse test ,Pulse width=300us,duty cycle≤...




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