Ultrafast Rectifier
Ultrafast Rectifier
INCHANGE Semiconductor
MUR2040CT
FEATURES ·Guarding for over voltage protection ·Dual rectifier co...
Description
Ultrafast Rectifier
INCHANGE Semiconductor
MUR2040CT
FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
400
V
IF(AV)
Average Rectified Forward Current Per Leg Total device
10 20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
PD
Maximum power dissipation
76
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Fast Recovery Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
MUR2040CT
MAX 2.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF= 10A ;Tj=25℃
1.3
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=125℃
VR= VRWM
250 10
trr
Maximum Reverse Recovery Time
IF =1A;
50
UNIT V μA ns
NOTICE: ISC reserves the rights to make c...
Similar Datasheet