MUR30120PT

Ultrafast Rectifier INCHANGE Semiconductor MUR30120PT FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) PD Maximum power dissipation VALUE UNIT 1200 V 30 A 150 A 78 W TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MUR30120PT MAX 1.6 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 15A ;Tj=150℃ IF= 15A ;Tj=25℃ VR= VRWM;Tj=25℃ IR Maximum Instantaneous Reverse Current VR= 0.8VRWM;Tj=25℃ VR= 0.8VRWM;Tj=125℃ 2.6 2.2 250 150 4000 trr Maximum Reverse Recovery Time IF =1A; 70 UNIT V μA ns NOTICE： ...