MURB1660CT

Ultrafast Rectifier MURB1660CT FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current 600 V 16 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 100 A wave, single phase, 60Hz) PD Maximum power dissipation 75 W TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MURB1660CT MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 8A ;Tj=150℃ IF= 8A ;Tj=25℃ 1.2 1.5 IR Maximum Instantaneous Reverse Current VR= VRWM VR= VRWM;Tj=150℃ 10 500 trr Maximum Reverse Recovery Time IF =0.5A;IR=1A;Irr=0.25A 50 UNIT V μA ns Notice： ISC reserves the rights to make changes of the content herein the datas...