RHRG3060

Ultra fast Rectifier INCHANGE Semiconductor RHRG3060 FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current @Tc=120℃ Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) PD Max Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range VALUE 600 UNIT V 30 A 325 A 125 W -65~175 ℃ -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor RHRG3060 MAX 1.2 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF=30A:Tc=25℃ Tc=150℃ 3.1 1.7 V IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=150℃ 0.25 1.0 mA trr Maximum Reverse Recovery Time IF =30A;diF/dt=200A/μs 45 ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time...