RHRG3040

Hyperfast Diode 30 A, 400 V − 600 V RHRG3040, RHRG3060 Description The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features Hyperfast Recovery trr = 45 ns (@ IF = 30 A) Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) 400 V, 600 V Reverse Voltage and High Reliability Avalanche Energy Rated These Devices are Pb−Free and are RoHS Compliant Applications Switching Power Supplies Power Switching Circuits General Purpose www.onsemi.com CATHODE ANODE CATHODE (BOTTOM SIDE METAL) TO−247−2LD CASE 340CL SYMBOL K A MARKING DIAGRAM $Y&Z&3&K RHRG30XX © Semiconductor Components Industries, LLC, 2001 March, 2020 − Rev. 3 $Y &Z &3 &K RHRG30XX XX = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code = 40, 60 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: RHRG3060/D RHRG3040, RHRG3060 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Paramete...