RHRG5060

Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ) Max Forward Voltage( VF = 2.1 V (@ TC = 25 °C ) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb−Free and is RoHS Compliant Applications Switching Power Supplies Power Switching Circuits General Purpose ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 93 °C) Repetitive Peak Surge Current (Square Wave, 20 kHz) VRRM 600 V VRWM 600 V VR 600 V IF(AV) 50 A IFRM 100 A Nonrepetitive Peak Surge Current (Halfwave 1 Phase, 60 Hz) IFSM 500 A Maximum Power Dissipation Avalanche Energy (See Figure 10 and Figure 11) PD EAVL 150 W 40 mJ Operating and Storage Temperature TSTG, TJ −65 to °C +175 Stresses exceeding those list...