SFF1005G

Ultra fast Rectifier INCHANGE Semiconductor SFF1005G FEATURES ·Low forward voltage drop ·High current capability ·High reliability ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage tw=500ns;duty=1/40 300 210 V 300 Average Rectified Forward Current @Tc=100℃ 10 A Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on 125 A rated load conditions Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor SFF1005G MAX 2 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF=5A ;Tj=25℃ 1.3 IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ VR= VRWM;Tj=100℃ 10 400 trr Maximum Reverse Recovery Time IF =0.5A;IR=1A;IRR= 0.25A 35 UNIT V μA ns NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is...