ultrafast rectifier. STTH2003CG Datasheet

STTH2003CG rectifier. Datasheet pdf. Equivalent

Part STTH2003CG
Description 300V ultrafast rectifier
Feature STTH2003 Datasheet 300 V ultrafast rectifier A1 K A2 K A2 A1 K TO-220AB K A2 K A1 TO-220FPAB A2 .
Manufacture STMicroelectronics
Datasheet
Download STTH2003CG Datasheet

Ultra fast Rectifier STTH2003CG FEATURES ·With TO-263(DPAK STTH2003CG Datasheet
STTH2003 Datasheet 300 V ultrafast rectifier A1 K A2 K A2 STTH2003CG Datasheet
Recommendation Recommendation Datasheet STTH2003CG Datasheet





STTH2003CG
STTH2003
Datasheet
300 V ultrafast rectifier
A1
K
A2
K
A2
A1 K
TO-220AB
K
A2
K
A1
TO-220FPAB
A2
A1 K
I2PAK
K
K
A2
A1
D2PAK
A2
A1
Product status
STTH2003
Product summary
IF(AV)
2 x 10 A
VRRM
300 V
Tj (max.)
175 °C
VF (typ.)
0.85 V
trr (max.)
25 ns
Features
• Combines highest recovery and reverse voltage performance
• Ultra-fast, soft and noise-free recovery
• Insulated package: TO-220FPAB
– Insulating voltage = 2000 VRMS sine
• ECOPACK®2 compliant component for D²PAK on demand
Applications
• Secondary rectification
• Switching diode
• Telecom power supply
• DC/DC converter
Description
The STTH2003 is a dual center tap fast recovery epitaxial diodes suited for switch
mode power supply and high frequency DC/DC converters.
Packaged in TO-220AB, TO-220FPAB, I²PAK or D²PAK, this device is especially
intended for secondary rectification.
DS1213 - Rev 12 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STTH2003CG
STTH2003
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
300
V
IF(RMS) Forward rms current
30
A
TO-220AB, D²PAK, I²PAK TC = 140 °C
IF(AV)
Average forward current δ = 0.5, square
wave
TO-220FPAB
Per diode
10
TC = 115 °C
A
All types
Per device
20
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
110
A
Tstg Storage temperature range
-65 to +175 °C
Tj Maximum operating junction temperature
175
°C
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Table 2. Thermal resistance parameters
Parameter
TO-220AB, D²PAK, I²PAK
TO-220FPAB
TO-220AB, D²PAK, I²PAK
TO-220FPAB
TO-220AB, D²PAK, I²PAK
TO-220FPAB
Per diode
Total
Value
2.5
4.6
1.3
4.0
0.1
3.5
Unit
°C/W
°C/W
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = 300 V
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Min. Typ. Max. Unit
-
20
µA
-
30
300
-
1.25
V
-
0.85
1.0
To evaluate the conduction losses, use the following equation:
P = 0.75 x IF(AV) + 0.025 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses:
DS1213 - Rev 12
page 2/16





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)