YG975C6R

Ultrafast Rectifier INCHANGE Semiconductor YG975C6R FEATURES ·Ultrafast with soft recovery ·150℃ Operating temperature ·Popular TO-220F package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) TJ Junction Temperature VALUE UNIT 600 V 20 A 100 A 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Ultrafast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor YG975C6R MAX 1.75 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF* Maximum Instantaneous Forward Voltage IF=10A ;Tj=25℃ 1.55 IR* Maximum Instantaneous Reverse Current VR= VRWM 10 trr Maximum Reverse Recovery Time IF =0.1A;IR=0.2A;Irec=0.05A 50 *:Pulse test ,Pulse width=300us,duty cycle≤2% UNIT V μA ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl...