Ultrafast Rectifier
Ultrafast Rectifier
INCHANGE Semiconductor
YG985C4R
FEATURES ·Ultrafast with soft recovery ·150℃ Operating temperature...
Description
Ultrafast Rectifier
INCHANGE Semiconductor
YG985C4R
FEATURES ·Ultrafast with soft recovery ·150℃ Operating temperature ·Popular TO-220 package ·Avalanche energy rated ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
TJ
Junction Temperature
VALUE UNIT
400
V
20
A
100
A
150
℃
Tstg
Storage Temperature Range
-40~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Ultrafast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
YG985C4R
MAX 1.25
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF=10A
1.45
IR
Maximum Instantaneous Reverse Current VR= 400V
35
trr
Maximum Reverse Recovery Time
IF =0.1A;IR =0.2A,
50
UNIT V μA ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod...
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