Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 200 V to 800 V VRRM • Not ESD Sensitive
No...
Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 200 V to 800 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N4588(R) thru 1N4593(R)
VRRM = 200 V - 800 V IF =150 A
DO-8 Package
AC
CA Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit
Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave
I2t for fusing Operating temperature Storage temperature
VRRM VDC IF
IF,SM
I2t Tj Tstg
TC ≤ 110 °C TC = 25 °C, tp = 8.3 ms 60 Hz Half wave
200 200 150
3000
37200 -55 to 150 -55 to 150
400 400 150
3000
37200 -55 to 150 -55 to 150
600 600 150
3000
37200 -55 to 150 -55 to 150
800 800 150
3000
37200 -55 to 150 -55 to 150
V V A
A
A2sec °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N4588(R)
Diode forward voltage Reverse current
VF
IF = 150 A, Tj = 110 °C
1.5
IR
VR = VRRM, Tj = 110 °C
9.5
Thermal characteristics
Thermal resistance, junction case
RthJC
0.35
1N4590(R) 1N4592(R) 1N4593(R)
1.5
1.5
1.5
9
6.5
5.5
0.35
0.35
0.35
Unit V mA
°C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/1n4590.pdf
1
1N4588(R) thru 1N4593(R)
Oct. 2018
http://www.diodemodule.com/silicon_produc...
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