1N5815

1N5815 Fast Recovery Diode FEATURES ·High surge current capability ·Standard polarity: stud is cathode ·Designed and qualified for industrial and consumer level ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges ·Converters ·Power supplies ·Machine tool controls ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IFSM Surge Forward Current TJ Junction Temperature Tstg Storage Temperature Range CONDITIONS TC=100℃ t=10ms t=8.3ms t=10ms t=8.3ms No voltage reapplied 100%VRRM reapplied VALUE UNIT 125 V 20 A 356 373 A 300 315 -65~175 ℃ -65~200 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark 1N5815 Fast Recovery Diode THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case,DC operation MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VF Forward Voltage drop PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) CONDITIONS IF(pk)= 10A, TJ= 25℃,tp=400µs MAX 0.89 UNIT V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equi...