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T9G0161203DH

INCHANGE

Phase Control Thyristor

FEATURES · Low on-state voltage · High dV/dt capability · Guaranteed Maximum Turn-OffTime · Minimum Lot-to-Lot variation...


INCHANGE

T9G0161203DH

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FEATURES · Low on-state voltage · High dV/dt capability · Guaranteed Maximum Turn-OffTime · Minimum Lot-to-Lot variations for robust device performance and reliable operation T9G0161203DH Phase Control Thyristors APPLICATIONS · Power supplies · Motor control · Light dimmers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM IT(AV) IT(RMS) Repetitive Peak Reverse Voltage Average Forward Current Maximum RMS on-state current ITSM PG(AV) TJ Tstg Max. peak, one-cycle forward, non-repetitive surge current Average gate power dissipation Junction Temperature Storage Temperature Range CONDITIONS Sinewave,180ο conduction,Tc=65℃ 8.3 msec (60Hz), sinusoidal wave shape, 180οconduction, Tj = 125℃ 10 msec (50Hz), sinusoidal wave shape, 180οconduction, Tj = 125℃ VALUE 1600 1200 1880 28500 26000 5 -40~125 -40~150 UNIT V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.025 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VTM Forward Voltage Drop IDRM Max. peak reverse and off-state IRRM leakage current IGT DC gate current required to trigger VGT DC gate voltage required to trigger tq Typical turn-off time CONDITIONS ITM=1600A, TJ = 25 ℃ TJ = 125℃, rated VDRM/VRRM applied TYPE MAX 1.35 75 UNIT V mA VD = 12 V;TJ = 25 ℃ VD = 12 V;TJ = 25 ℃ ITM >1000A, TJ = 125℃, di/dt = 25A/µs, VR≥5 V, dv/dt = 20V/µs,Duty cycle≥0.01% 200 mA 3 V 250 µs isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademar...




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