T2180N

T2180N Phase Control Thyristors FEATURES ·Low on-state voltage ·High capability for dV/dt ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies ·Motor control ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage 12 1200 1200 T2180N 14 16 1400 1600 1400 1600 18 1800 1800 UNIT V V SYMBOL PARAMETER IT(AV) Average Forward Current IT(RMS) ITSM PG(AV) TJ Tstg Maximum RMS on-state current Max. peak, one-cycle forward, non-repetitive surge current Average gate power dissipation Junction Temperature Storage Temperature Range CONDITIONS Sinewave,180ο conduction,Tc=75℃ Tc=75℃ 10 ms, sinusoidal wave shape, 180ο conduction, Tj = 125℃ VALUE UNIT 2180 A 3422 A 32000 A 5 W -40~125 ℃ -40~140 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.014 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark T2180N Phase Control Thyristors ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VTM Forward Voltage Drop IRRM Max. peak reverse and off-state leakage current IGT DC gate current required to trigger VGT DC gate voltage required to trigger tq Typical turn-off time PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) CONDITIONS ITM=2000A; TJ = 125 ℃ TJ = 125℃; VR=VRRM VD = 12 V;TJ = 25 ℃ VD = 12 V;TJ = 25 ℃ ITM >1000A, TJ = 125℃, di/dt = 25A/µs, VR=50 V, dv/dt =...