Schottky Rectifier. VS-6CWQ10FN-M3 Datasheet

VS-6CWQ10FN-M3 Rectifier. Datasheet pdf. Equivalent

Part VS-6CWQ10FN-M3
Description High Performance Schottky Rectifier
Feature www.vishay.com VS-6CWQ10FN-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3.5 A.
Manufacture Vishay
Datasheet
Download VS-6CWQ10FN-M3 Datasheet

www.vishay.com VS-6CWQ10FN-M3 Vishay Semiconductors High P VS-6CWQ10FN-M3 Datasheet
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VS-6CWQ10FN-M3
www.vishay.com
VS-6CWQ10FN-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 3.5 A
Base
common
cathode
4
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
2 x 3.5 A
100 V
See Electrical table
4.9 mA at 125 °C
150 °C
Common cathode
5 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-6CWQ10FN-M3 surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF
3 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
7
100
440
0.63
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-6CWQ10FN-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES
3.5
50 % duty cycle at TC = 135 °C, rectangular waveform
7
5 μs sine or 3 μs rect. pulse
Following any rated load 440
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
70
TJ = 25 °C, IAS = 1 A, L = 10 mH
5.0
Current decaying linearly to zero in 1 μs
0.5
Frequency limited by TJ maximum VA = 1.5 x VR typical
UNITS
A
mJ
A
Revision: 22-Nov-16
1
Document Number: 93318
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-6CWQ10FN-M3
www.vishay.com
VS-6CWQ10FN-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
3A
6A
3A
6A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.81
0.96
0.63
0.74
1
4.9
0.48
30.89
92
5.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
per leg
per device
RthJC
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d--d--P--T---t-Jo---t < -R----t-1-h---J--A-- thermal runaway condition for a diode on its own heatsink
VALUES
UNITS
-40 to +150
°C
4.70
2.35
°C/W
0.3
g
0.01
oz.
6CWQ10FN
Revision: 22-Nov-16
2
Document Number: 93318
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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