HBR20150S

Schottky Barrier Rectifier INCHANGE Semiconductor HBR20150S FEATURES ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 150 V IF(AV) Average Rectified Forward Current@Tc=150℃ 20 A Nonrepetitive Peak Surge Current IFSM （ 8.3ms single half sine-wave superimposed 180 A on rated load conditions）tp=5μs sine TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor HBR20150S THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF= 10A ; Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; Tc= 125℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ 0.9 V 0.75 0.01 mA 5 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...