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HBR20150S

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR20150S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 150 V 175 ℃ 0...


Jilin Sino

HBR20150S

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R SCHOTTKY BARRIER DIODE HBR20150S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20(2×10)A 150 V 175 ℃ 0.75V (@Tj=125℃) TO-22O   APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications TO-263   ,   ,  (RoHS) FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product TO-22OHF DPAKM ORDER MESSAGE - Halogen-Tube Order codes - - Halogen Free-Tube Halogen-Reel - Halogen Free-Reel Marking Package HBR20150S-CA-B HBR20150S-CA-BR N/A N/A HBR20150S TO-220 HBR20150S-FA-B HBR20150S-FA-BR N/A N/A HBR20150S TO-220HF HBR20150S-S-B HBR20150S-S-BR HBR20150S-S-A HBR20150S-S-AR HBR20150S TO-263 N/A N/A HBR20150S-RM-A HBR20150S-RM-AR HBR20150S DPAKM (Rev.):201806E 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Repetitive peak reverse voltage VRRM Maximum DC blocking voltage VDC TC=150℃ Average forward (TO-220/263 per device current /DPAKM) TC=125℃ (TO-220HF) per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) IFSM 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Tj Storage temperature range TSTG HBR20150S Value 150 Unit V 150 V 20 A 10 180 A 175 ℃ -40~+15 ℃ 0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions Value(min) Value(typ) Value(max) Tj =25℃ 1...




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