MBR30L45CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR30L45CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=120℃ VALUE UNI T 45 31 V 45 30 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on 220 A rated load conditions) IFRM Peak Repetitive Reverse Surge Current 30 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR30L45CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current IF= 15A ;Tc= 25℃ IF= 15A ;Tc= 125℃ IF= 30A ;Tc...