Schottky Barrier Rectifier
MBR1035CT
FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current cap...
Schottky Barrier Rectifier
MBR1035CT
FEATURES ·
Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
35
V
24.5
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 105℃
10
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
125
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current (20μs, 1.0kHz)
1.0
A
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
dv/dt Voltage Rate of Change (Rated VR)
1000 V/μs
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
MBR1035CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 5A ; TC= 25℃
VF
Maximum Instantaneous Forward Voltage IF= 5A ; TC= 125℃
IF= 10A ; TC= 25℃
MAX
0.70 0.57 0.84
UNIT V
I...