MBR1060C

Schottky Barrier Rectifier INCHANGE Semiconductor MBR1060C FEATURES ·Low forward voltage drop ·150℃ operating junction temperature ·High surge current capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supply Output Rectification ·Power Management ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 125 A wave, single phase, 60Hz) TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR1060C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.2 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 5A ; TC= 25℃ IF= 5A ; TC= 125℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; TC= 25℃ IF= 10A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 125℃ MAX 0.75 0.65 0.9 0.8 0.1 15 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only...