MBR1080CT

Schottky Barrier Rectifier MBR1080CT FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 80 V 56 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 100℃ 10 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 120 A wave, single phase, 60Hz) TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR1080CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 5A ; TC= 25℃ VF Maximum Instantaneous Forward Voltage IF= 5A ; TC= 125℃ IF= 10A ; TC= 25℃ IF= 10A ;Tc=125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Vo...