MBR2060CT

MOSPEC MBR2030CT Thru MBR2060CT Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊175℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ＊In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR20 Symbol Unit 30CT 35CT 40CT 45CT 50CT 60CT VRRM VRWM 30 35 40 45 50 60 V VR RMS Reverse Voltage VR(RMS) 21 25 28 32 35 42 V Average Rectifier Forward Current (per diode) Total Device (Rated VR), TC=100℃ IF(AV) 10 20 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions IFSM 150 A halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range TJ , Tstg -65 to +175 ℃ THERMAL RESISTANCES Typical Thermal Resistance junction to case (per diode) Rθ j-c 3.2 ℃/w ELECTRIAL CHARACT...