MBR3035CT

Schottky Barrier Rectifier MBR3035CT FEATURES ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 35 V 24.5 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 100℃ 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 200 A wave, single phase, 60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR3035CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS IF= 15A ; TC= 25℃ VF Maximum Instantaneous Forward Voltage IF= 30A ; TC= 25℃ IF= 30A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, ...