MBR3040PT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR3040PT FEATURES ·With TO-247(TO-3) packaging ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·High current capability and low forward voltage drop ·Guardring for overvoltage protection ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=125℃ VALUE UNI T 40 V 30 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on 200 A rated load conditions) IRRM Peak Repetitive Reverse Current 1.0 mA TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR3040PT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current IF= 20A ;Tc= 2...