MBR3060CT

MBR3050CT thru MBR3060CT High Tjm Low IRRM Schottky Barrier Diodes C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR3050CT 50 35 50 MBR3060CT 60 42 60 Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=30A @TJ=125oC IF=15A @TJ=25oC IF=30A @TJ=25oC IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Maximum Ratings 30 200 10000 0.85 0.80 0.95 0.2 40 2.0 400 -55 to +150 -55 to +175 Unit A A V/us V mA oC/W pF oC oC FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for t...