MBR10150CS

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CS FEATURES ·With TO-252(DPAK) packaging ·Low power loss ·High efficiency ·High frequency operation ·High surge capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=142℃ VALUE UNI T 150 V 5 A IF(RMS) Forward rms current@Tc=142℃ 10 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 100 A rated load conditions,60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CS THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF= 5A ;Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 5A ;Tc= 125℃ VR= rated VRRM; Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tc= 125℃ 0.92 V 0.82 0.1 mA 15 NOTICE： ISC reserves the rights to make changes of the content herein the data...