|
|
BARRIER RECTIFIER. MBR10200F Datasheet |
|
|
|
MBR1040F THRU MBR10200F
10AMPERS ISOLATION SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 40 and 200 Volts Forward Current - 10.0 Ampere
ITO-220AC
FEATURES
0.406(10.3)
0.381(9.7)
Ø 0.134(3.4)
Ø 0.118(3.0)
0.130(3.3)
0.114(2.9)
Pin 1
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.2(5.08)
TYP.
0.027(0.67)
0.022(0.57)
Dimensions in inches and (millimeters)
0.189(4.8)
0.165(4.2)
0.114(2.9)
0.098(2.5)
◆ Flame Retardant Epoxy Molding Compound.
◆ Metal silicon junction, majority carrier conduction.
◆ Low power loss, High efficiency, High current capability.
◆ Guardring for overvoltage protection.
◆ Electrically Isolated. No Isolation Hardware Required.
◆ In compliance with EU Rohs 2002/95/EC directives.
◆ For use low voltage, high frequency inverters froo wheeling, and
polarlity protection application.
◆ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
MECHANICAL DATA
Case: ITO-220AC, Molded plastic.
Terminals: Solderable per MIL-STD-750，Method 2026
Standard Packaging : Tube.
Polarity: As marked.
Mounting Position: Any.
Weight: 0.055ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specif ied.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOLS
MBR10 MBR10 MBR10 MBR10 MBR10 MBR10 MBR10 MBR10 MBR10
40F 45F 50F 60F 80F 90F 100F 150F 200F
UNITS
VRRM
40 45 50 60 80 90 100 150 200 Volts
Maximum RMS voltage
VRMS
28 31.5 35 42 56 63 70 105 140 Volts
Minimum DC Breakdown Voltage
VDC
40 45 50 60 80 90 100 150 200 Volts
Average Rectified current
IF(AV)
Non-repetitive Peak Forward Surge Current at 1=8.3ms half
sine-wave superimposed on rated load (JEDEC mathod)
IFSM
Maximum Forward Voltage
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Thermal Resistance
at IF=10A
VF
0.7
TJ= 25°C
TJ=125°C
IR
Rθ JC
0.75
10
150
0.8
0.05
20
3
Amp
Amps
0.9
Volts
mA
°C/W
Operating Junction and Storage Temperature Range
TSTG
-50~+150
-65 ～ +175
°C
Note: Both bonding and chip structure are available.
GOOD ELECTRONIC CO., LTD
|
MBR1040F THRU MBR10200F
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
20
40V
45-200V
10
RESISTIVE OR
INDUCTIVE LOAD
0
0.0 20 40 60 80 100 120 140 160 180
LEAD TEMPERATURE (°C)
150
125
100
75
50
25
0
1
FIG. 2-TYPICAL FORWARD SURGE
CHARACTERISTICS
2
5
10 20
50 100
No. OF CYCLE at 60Hz
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
10
TC=100°C
1
0.1
0.01
0.001
0
TC=75°C
TC=25°C
40V
45-200V
20
40
60
80
100
PERCENT OF INSTANTANEOUS
REVERSE VOLTAGE (%)
FIG. 4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100.0
10.0
50~60V
40~45V
150~200V
80~100V
1.0
TA=25oC
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWORD VOLTAGE (V)
GOOD ELECTRONIC CO., LTD
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |
