MBR20100CD

Schottky Barrier Rectifier MBR20100CD FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage IF(AV) IFSM TJ Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Max.Junction Temperature Tstg Storage Temperature Range VALUE UNIT 100 V 20 A 240*2 A 150 ℃ -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS 2 ℃/W MAX UNIT IF= 10A ; Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; Tc= 125℃ VR= 100V;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= 100V;Tc= 125℃ 0.85 V 0.72 0.01 mA 10 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier PACKAGE OUTLINE DIMENSIONS MBR20100CD NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained...