BARRIER RECTIFIER. MBR3050PT Datasheet

MBR3050PT RECTIFIER. Datasheet pdf. Equivalent

Part MBR3050PT
Description SCHOTTKY BARRIER RECTIFIER
Feature MBR3030PT THRU MBR30100PT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 to 100 Volts Forward Curre.
Manufacture KD
Datasheet
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MBR3050PT
MBR3030PT THRU MBR30100PT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 30 to 100 Volts Forward Current - 30.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
MECHANICAL DATA
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
TO-3P
15.8± 0.2
8.0± 0.2
3.6± 0.15
5.0± 0.15
2.0± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
PIN 1 -
PIN 3 -
2.4± 0.2
+
Case, PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 15A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
S ymbol
MBR MBR MBR MBR MBR MBR MBR MBR
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT
Unit
VRRM
VRWM
30
35
40
45
50
60
80 100
V
VR
VR(RMS) 21 25 28 32 35 42 56 70
V
IO
30
A
IFSM
275
A
VFM
IRM
Cj
RJC
Tj, TSTG
0.55
0.65
1.0
60
1100
1.4
-65 to +150
0.85
V
mA
pF
° C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.



MBR3050PT
MBR3030PT THRU MBR30100PT
RATINGS AND CHARACTERISTIC CURVES
30
24
18
12
6
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0
10
40 60 80
100
120
140150
TC, CASE TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
40
3030PT ~ 3045PT
20
3050PT ~ 3060PT
3080PT ~ 30100PT
10
Tj = 25ºC
Pulse Width = 300 µs
2% Duty Cycle
1
0
0.25
0.50 0.75 1.00 1.25
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
240
2000
Tj = 25ºC
f = 1MHz
180
1000
120
60
8.3ms Single Half Sine-Wave
JEDEC Method
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance





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