MBRB745

Schottky Barrier Rectifier INCHANGE Semiconductor MBRB745 FEATURES ·With TO-263(D2PAK) packaging ·Low leakage current, low power loss, high efficiency ·High frequency operation ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNI T 45 V 7.5 A IF(RMS) Forward rms current@Tc=125℃ 15 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 150 A rated load conditions) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB745 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF= 7.5A ;Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 7.5A ;Tc= 125℃ IF= 15A ;Tc= 25℃ IF= 15A ;Tc= 125℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃ 0.65 0....