VS-MBRB735-M3

www.vishay.com VS-MBRB735-M3, VS-MBRB745-M3 Vishay Semiconductors High Performance Schottky Rectifier, 7.5 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) 7.5 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C TJ max. 150 °C EAS Package 7 mJ D2PAK (TO-263AB) Circuit configuration Single FEATURES 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-MBRB7... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM Rectangular waveform tp = 5 μs sine VF 7.5 Apk, TJ = 125 °C TJ Range VALUES 7.5 35, 45 690 0.57 -65 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB735-M3 35 VS-MBRB745-M3...