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VS-MBRB2535CT-M3 Dataheets PDF



Part Number VS-MBRB2535CT-M3
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifier
Datasheet VS-MBRB2535CT-M3 DatasheetVS-MBRB2535CT-M3 Datasheet (PDF)

www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C 150 °C 16 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration .

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www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C 150 °C 16 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode FEATURES • 150 °C TJ operation • Center tap D2PAK (TO-263AB) and TO-262AA packages • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.      MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) IFRM VRRM IFSM VF TJ Rectangular waveform (per device) TC = 130 °C (per leg) tp = 5 μs sine 30 Apk, TJ = 125 °C Range VALUES 30 30 35/45 1060 0.73 -65 to +150 VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBRB2535CT-M3 VS-MBR2535CT-1-M3 35 VS-MBRB2545CT-M3 VS-MBR2545CT-1-M3 45 UNITS A V A V °C UNITS V Revision: 03-Nov-17 1 Document Number: 96406 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current per leg per device IF(AV) Peak repetitive forward current per leg IFRM Non-repetitive peak surge current IFSM Non-repetitive avalanche energy per leg EAS Repetitive avalanche current per leg IAR TEST CONDITIONS TC = 130 °C, rated VR Rated VR, square wave, 20 kHz, TC = 130 °C 5 μs sine or 3 μs  rect. pulse Following any rated load condition and with rated VRRM applied Surge applied at rated load conditions halfwave,  single phase, 60 Hz TJ = 25 °C, IAS = 2 A, L = 8 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 15 30 30 1060 150 16 2 UNITS A mJ A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous  reverse current Threshold voltage Forward slope resistance Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt 30 A TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C Rated DC voltage TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured from top of terminal to mounting plane Rated VR VALUES 0.82 0.73 0.2 40 0.355 12.3 700 8.0 10 000 UNITS V mA V m pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance,  junction to case per leg TJ TStg RthJC DC operation Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device minimum maximum Non-lubricated threads Case style D2PAK (TO-263AB) Case style TO-262AA VALUES -65 to 150 -65 to 175 UNITS °C 1.5 °C/W 0.50 2 g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf · in) MBRB2535CT MBRB2545CT MBR2535CT-1 MBR2545CT-1 Revision: 03-Nov-17 2 Document Number: 96406 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 1000 IR - Reverse Current (mA) 100 10 TJ = 150 °C 1 0.1 0.01 0.001 TJ = 125 °C TJ = 100 °C TJ =.


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