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VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
2 1
3
1
2
D2PAK (TO-263AB)
3
Base common cathode
2
TO-262AA
Base common cathode
2
2 1 Common 3 Anode cathode Anode
VS-MBRB25..CT-M3
2 1 Common 3 Anode cathode Anode
VS-MBR25..CT-1-M3
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM max. TJ max. EAS Package
2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C
150 °C 16 mJ D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• 150 °C TJ operation • Center tap D2PAK (TO-263AB) and TO-262AA
packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) IFRM VRRM IFSM VF TJ
Rectangular waveform (per device) TC = 130 °C (per leg)
tp = 5 μs sine 30 Apk, TJ = 125 °C Range
VALUES 30 30
35/45 1060 0.73 -65 to +150
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak reverse voltage
VR VRWM
VS-MBRB2535CT-M3 VS-MBR2535CT-1-M3
35
VS-MBRB2545CT-M3 VS-MBR2545CT-1-M3
45
UNITS A V A V °C
UNITS V
Revision: 03-Nov-17
1
Document Number: 96406
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
per leg per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
TC = 130 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 130 °C
5 μs sine or 3 μs rect. pulse
Following any rated load condition and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 8 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 15 30 30
1060
150 16 2
UNITS
A
mJ A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current Threshold voltage Forward slope resistance Maximum junction capacitance Typical series inductance Maximum voltage rate of change
Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO) rt CT LS
dV/dt
30 A
TJ = 25 °C TJ = 125 °C
TEST CONDITIONS TJ = 25 °C TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured from top of terminal to mounting plane Rated VR
VALUES 0.82 0.73 0.2 40 0.355 12.3 700 8.0
10 000
UNITS
V
mA
V m pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case per leg
TJ TStg
RthJC
DC operation
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque Marking device
minimum maximum
Non-lubricated threads Case style D2PAK (TO-263AB) Case style TO-262AA
VALUES -65 to 150 -65 to 175
UNITS °C
1.5 °C/W
0.50
2
g
0.07
oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
MBRB2535CT MBRB2545CT
MBR2535CT-1 MBR2545CT-1
Revision: 03-Nov-17
2
Document Number: 96406
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
1000
IR - Reverse Current (mA)
100
10
TJ = 150 °C
1 0.1 0.01 0.001
TJ = 125 °C TJ = 100 °C TJ =.