www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
...
www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 2 x 15 A
2 1
3
1
2
D2PAK (TO-263AB)
3
Base common cathode
2
TO-262AA
Base common cathode
2
2 1 Common 3 Anode cathode Anode
VS-MBRB25..CT-M3
2 1 Common 3 Anode cathode Anode
VS-MBR25..CT-1-M3
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM max. TJ max. EAS Package
2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C
150 °C 16 mJ D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
150 °C TJ operation Center tap D2PAK (TO-263AB) and TO-262AA
packages
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION This center tap
Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) IFRM VRRM IFSM VF TJ
Rectangular waveform (per device) TC...