MBRB10200

Schottky Barrier Rectifier INCHANGE Semiconductor MBRB10200 FEATURES ·With TO-263(D2PAK) packaging ·Low leakage current, low power loss, high efficiency ·High frequency operation ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage VALUE UNI T 200 140 V 200 IF(AV) Average Rectified Forward Current@Tc=125℃ 10 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on 150 A rated load conditions) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB10200 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 10A ;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃ 0.95 V 0.5 50 mA NOTICE： ISC reserves the rights to make changes of the content her...