MBRD2040CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBRD2040CT FEATURES ·With TO-252(DPAK) packaging ·Low power loss ·High frequency operation ·High surge capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNI T 40 V 20 A IF(RMS) Forward rms current 40 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 120 A rated load conditions,60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRD2040CT THERMAL CHARACTERISTICS SYMBOL Rth j-a Typical Thermal Resistance PARAMETER MAX 45 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 10A ;Tc= 25℃ VR= rated VRRM; Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tc= 125℃ 0.60 V 0.1 mA 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contain...