Document
MBRD10200CT
Technical Data Data Sheet N0120, Rev. A
MBRD10200CT SCHOTTKY RECTIFIER
DPAK
Circuit Diagram
Features
150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term
reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request
Applications
Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery charging
Maximum Ratings:
Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge Current(peg leg)
Symbol VRRM VRWM VR
IF (AV)
IFSM
Condition
-
50% duty cycle @TC =105°C, rectangular wave form 8.3 ms, half Sine pulse
Max.
200
5(peg leg) 10(peg device)
128
Units V A A
Electrical Characteristics:
Characteristics Forward Voltage Drop (per leg) *
Reverse Current (per leg) *
Junction Capacitance(per leg) Voltage Rate of Change * Pulse width < 300 µs, duty cycle < 2%
Symbol VF1 VF2 IR1 IR2 CT dv/dt
Condition @ 5A, Pulse, TJ = 25 C @ 5A, Pulse, TJ = 125 C @VR = rated VR, TJ = 25 C @VR = rated VR, TJ = 125 C @VR = 5V, TC = 25 C, fSIG = 1MHz
-
Typ. 0.85 0.70 0.0001 0.05 90
-
Max. 0.90 0.74
1 25 150 10,000
Units V V mA mA pF
V/s
China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com
Technical Data Data Sheet N0120, Rev. A
Thermal-Mechanical Specifications:
Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case
Approximate Weight Case Style
Symbol TJ Tstg
RJC
wt
Ratings and Characteristics Curves
MBRD10200CT
Condition -
-
DPAK
Specification -55 to +150 -55 to + 150 3.5(per leg)
2(per package) 0.39
Units C C
C/W
g
China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com
Technical Data Data Sheet N0120, Rev. A
Mechanical Dimensions DPAK
MBRD10200CT
SYMBOL
A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ Θ h
V
Millimeters
Min. Max.
2.20 2.40 0.00 0.127 0.66 0.86
0.46 0.60
6.50 6.70 5.13 5.46
4.83 REF. 6.00 6.20 2.186 2.386 9.70 10.40
2.90 REF. 1.40 1.70
1.60 REF. 0.60 1.00 1.10 1.30 0° 8° 0.00 0.30
5.35 REF.
Inches
Min. Max.
0.087 0.094 0.000 0.005 0.026 0.034
0.018 0.024
0.256 0.264 0.202 0.215
0.190 REF. 0.236 0.244 0.086 0.094 0.381 0.409
0.144 REF. 0.055 0.067
0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012
0.211 REF.
Ordering Information
Marking Diagram
Device MBRD10200CT
Package DPAK
(Pb-Free)
Shipping 2500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel Packaging specification.
Where XXXXX is YYWWL
MBR D 10 200 CT SSG YY WW L
= Device Type = Package type = Forward Current (10A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number
Cautions:Molding resin Epoxy resin UL:94V-0
Carrier Tape Specification DPAK
SYMBOL
A B C d E F P0 P P1 W
Millimeters
Min. 6.80
Max. 7.00
10.40
10.60
2.60
2.80
Φ1.45
Φ1.65
1.65
1.85
7.40
7.60
3.90
4.10
7.90
8.10
1.90
2.10
15.90
16.30
China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com
Technical Data Data Sheet N0120, Rev. A
MBRD10200CT
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) un.