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MBR1045CT

First Silicon

Dual Schottky Barrier Rectifier

SEMICONDUCTOR TECHNICAL DATA MBR1045CT, MBRF1045CT, MBRB1045CT Dual Schottky Barrier Rectifier Reverse Voltage 45Volts...


First Silicon

MBR1045CT

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Description
SEMICONDUCTOR TECHNICAL DATA MBR1045CT, MBRF1045CT, MBRB1045CT Dual Schottky Barrier Rectifier Reverse Voltage 45Volts , Forward Current 10A Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Mechanical Data Case: JEDEC TO-220AB, TO-220F , TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams TO-220AB TO-220F TO-263AB(D2PAK) Mounting Pad Layout TO-263AB Dimensions in inches and (millimeters) 2011. 11. 16 Revision No : 0 1/3 MBR1045CT, MBRF1045CT, MBRB1045CT Maximum Ratings and Electrical Characteristics ( TC = 25oC unless otherwise noted ) MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS(TC=25°C unless otherwise moted) PARAMETER TEST CONDITIONS SYMBOL MBRF1045CT UNIT Maximum repetitive peak reverse voltage VRRM 45 V Working peak reverse voltage VRWM 45 V Maximum DC blocking voltage VDC 45 V Maximum average forward rectified current at Tc=105°C total device per diode IF(AV) 10 A 5 Peak forward surge current 8.3ms singl...




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